Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.
Identifieur interne : 000377 ( Main/Exploration ); précédent : 000376; suivant : 000378Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.
Auteurs : RBID : pubmed:23294730Abstract
In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.
DOI: 10.1186/1556-276X-8-18
PubMed: 23294730
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.</title><author><name sortKey="Chen, Fa Hsyang" uniqKey="Chen F">Fa-Hsyang Chen</name><affiliation wicri:level="1"><nlm:affiliation>Department of Electronics Engineering, Chang Gung University, 333, Taoyuan, Taiwan. tmpan@mail.cgu.edu.tw.</nlm:affiliation><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronics Engineering, Chang Gung University, 333, Taoyuan</wicri:regionArea></affiliation></author><author><name sortKey="Her, Jim Long" uniqKey="Her J">Jim-Long Her</name></author><author><name sortKey="Shao, Yu Hsuan" uniqKey="Shao Y">Yu-Hsuan Shao</name></author><author><name sortKey="Matsuda, Yasuhiro H" uniqKey="Matsuda Y">Yasuhiro H Matsuda</name></author><author><name sortKey="Pan, Tung Ming" uniqKey="Pan T">Tung-Ming Pan</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1186/1556-276X-8-18</idno><idno type="RBID">pubmed:23294730</idno><idno type="pmid">23294730</idno><idno type="wicri:Area/Main/Corpus">000862</idno><idno type="wicri:Area/Main/Curation">000862</idno><idno type="wicri:Area/Main/Exploration">000377</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23294730</PMID><DateCreated><Year>2013</Year><Month>03</Month><Day>01</Day></DateCreated><DateCompleted><Year>2013</Year><Month>03</Month><Day>04</Day></DateCompleted><DateRevised><Year>2013</Year><Month>04</Month><Day>18</Day></DateRevised><Article PubModel="Electronic"><Journal><ISSN IssnType="Print">1931-7573</ISSN><JournalIssue CitedMedium="Print"><Volume>8</Volume><Issue>1</Issue><PubDate><Year>2013</Year></PubDate></JournalIssue><Title>Nanoscale research letters</Title><ISOAbbreviation>Nanoscale Res Lett</ISOAbbreviation></Journal><ArticleTitle>Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.</ArticleTitle><Pagination><MedlinePgn>18</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1186/1556-276X-8-18</ELocationID><Abstract><AbstractText>In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Chen</LastName><ForeName>Fa-Hsyang</ForeName><Initials>FH</Initials><Affiliation>Department of Electronics Engineering, Chang Gung University, 333, Taoyuan, Taiwan. tmpan@mail.cgu.edu.tw.</Affiliation></Author><Author ValidYN="Y"><LastName>Her</LastName><ForeName>Jim-Long</ForeName><Initials>JL</Initials></Author><Author ValidYN="Y"><LastName>Shao</LastName><ForeName>Yu-Hsuan</ForeName><Initials>YH</Initials></Author><Author ValidYN="Y"><LastName>Matsuda</LastName><ForeName>Yasuhiro H</ForeName><Initials>YH</Initials></Author><Author ValidYN="Y"><LastName>Pan</LastName><ForeName>Tung-Ming</ForeName><Initials>TM</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>01</Month><Day>08</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nanoscale Res Lett</MedlineTA><NlmUniqueID>101279750</NlmUniqueID><ISSNLinking>1556-276X</ISSNLinking></MedlineJournalInfo><CommentsCorrectionsList><CommentsCorrections RefType="Cites"><RefSource>Nature. 2004 Nov 25;432(7016):488-92</RefSource><PMID Version="1">15565150</PMID></CommentsCorrections></CommentsCorrectionsList><OtherID Source="NLM">PMC3584805</OtherID></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2012</Year><Month>10</Month><Day>31</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2012</Year><Month>12</Month><Day>5</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>1</Month><Day>8</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>1</Month><Day>9</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>1</Month><Day>9</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>1</Month><Day>9</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>epublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">1556-276X-8-18</ArticleId><ArticleId IdType="doi">10.1186/1556-276X-8-18</ArticleId><ArticleId IdType="pubmed">23294730</ArticleId><ArticleId IdType="pmc">PMC3584805</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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